Light punch through igbt driver

Jul 18, 2019 igbt takes a parasitic thyristor includes the 4layer npn structures. The field underneath the gate then becomes strongly dependent on the drainsource voltage, as is the drain current. New gen 3 650v igbt a soft and efficient switch for. The controlled punch through cpt igbt buffer is discussed as a mean for the reduction of wafer thickness down to the theoretical limit of the next generation 1200 v igbt. Integrated gate drivers, igbts, and freewheeling diodes igbt desaturation mode current sensing extreme light punch through igbt for 2060 khz switching frequency square rbs operating area low vce saturation voltage.

Ixxk100n60c3h1ixxx100n60c3h1ixys mosfets and igbts are covered4,835,5924,931,8445,049,9615. Before proceeding further, it is good to refresh about the basics of igbt. A gate drive circuit is an integrated circuit that accepts a low power input from a controller ic and produces the appropriate voltage and current for a power semiconductor switch. They have a positive temp coefficient of vcesat, ideal for paralleling. The gen4 architecture combines the trench topology with the extreme light punch through xpt fieldstop design of the gen3 to support a combination of low onstate. Introduction of fieldstop shortedanode igbt digikey. Punching through softly to understand the operation of spt igbts, we must first look at the punch through pt and non punch through npt igbts. Manufactured through the stateoftheart genx3 igbt process and an extremelight punchthrough xpt design platform, these devices feature highcurrent handling capabilities, highspeed switching abilities, low total energy losses, and low current fall times. Drives applications such air conditioning systems and compressor drivers as well as in light industrial application. Soft punch through igbts in lopak modules boost power. Our integrated circuits, igbt drivers, and diodes enable compact, energyefficient acdc power supplies for a vast range of electronic products including mobile devices, tvs, pcs, appliances, led lights, smart utility meters, traction motors, dc. Isolated gate driver the basic requirement of developing igbt drivers is to ensure insulation voltage for product safety and user safety. This advanced hic is a combination of irs low v ceon punch through igbt technology and the industry benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. In its second generation, the light punch through lpt structure has been introduced, as shown in figure 1.

As a member power integrations plugandplay driver family, it satisfies industrys requirements for optimized electrical performance and noise immunity. Its igbt chip uses light punch through lpt technology and diode chip uses soft reverse recovery technology, so it. Its electrical characteristics and performance are showed also. Ixa60if1200na ixys semiconductor, igbt single transistor. The fieldstop fs igbt provides lowersaturation voltage drop and lower switching losses versus the conventional non punch through npt igbt. Designing the reliable driver for the latest generation igbt. Powered from a single polarity 15v power supply, this design shows the operation of two 1200v igbt devices with a maximum collector. An alternative approach to driving parallelconnected igbt modules is to use an individual driver for each module. Its an ic that reduces the number of external components needed for charging the capacitor of the flash and it has. As they have faster turnoff times, they are used for inverter and chopper circuits. Offering both low on state voltage and minimal switching loss, the igbt is well suited for motor drive control and other hard switching applications. These devices are the industrys fastest switching high current igbt modules.

The technology allows for the design of variablefrequency drives, which are seen as good for energyefficient systems. A typical implementation of igbt driver is shown in fig. Connection of gate drivers to igbt and controller an7002 20060905 rev00 applicationnote. The phase leg igbt with integrated driver module design includes the following features. Igbts that are based on non punch through npt technology. Extreme light punch through igbt for 2060 khz switching frequency. The new chipset demonstrates ruggedness, low losses, good parallelabilty and soft switching edges.

Although designed for driving discrete and module igbts, this device offers a. In order to reduce the oscillations in the igbt, the turnoff gate resistor can be increased. Rohm semiconductor started to manufacture igbt devices in 2009. Power supply igbt gate driver mcu q1 q2 q3 q4 cdc tig welder output load stage input mains 185vac 265vac recti. Browse digikeys inventory of ixxn xpt igbt series ixysigbts modules. Square reverse bias safe operating areas rbsoa up to breakdown voltages. Download citation advanced wide cell pitch cstbts having light punchthrough lpt structures in order to improve the total performance of nonpunchthrough npt type trench igbt for the 1200. Figure 9 igbt waveforms of vce yellow and vge light blue during turnoff in tested in a portable welding machine. Discrete 600v xpt igbts from ixys ixys corporation. Subhashish bhattacharya, in wide bandgap semiconductor power devices, 2019. Easy paralleling due to the positive temperature coefficient of the onstate voltage rugged extreme light punch through xpt design results in. Ixxkx100n60c3h1 datasheetpdf 1 page ixys corporation. Advanced wide cell pitch cstbts having light punchthrough.

In its second generation, the light punch through lpt structure was introduced and is shown in figure 1. The system needs igbt with low losses, high robustness and high reliability. This advanced hic is a combination of irs low v ceon punch through igbt technology and the industry. High power density low gate drive requirement applications power inverters, ups, smps, pfc, battery chargers, welding machines, lamp ballasts and motor drives new discrete 600v extreme light punch through xpt igbts. Article library process enhancements increase igbt efficiency for motor drive applications process enhancements increase igbt efficiency for motor drive applications. An insulatedgate bipolar transistor igbt is a threeterminal power semiconductor device. Extreme light punch through igbt for 2060 khz switching. Ixxkx100n60c3h1 datasheet27 pages ixys extreme light. Soft punch through spt setting new standards in 1200v.

Extremelight punchthrough xpt thin wafer technology. Gate drive circuit an overview sciencedirect topics. Igbt transistor, igbt transistor module all industrial. Novel softpunchthrough spt 1700v igbt sets benchmark. Applications engineering manager advanced power technology 29 november 2004. The highly integrated scale2 chipset reduces the component count by 80% compared to conventional solutions, thus significantly increasing reliability and. Generate gate signals to turnon or turnoff the igbt according to the command signals from the control circuit gate drivers usually provide the electrical isolation e. Process enhancements increase igbt efficiency for motor. Highvoltage insulated gate bipolar transistor modules power modules for vehicles power modules for evphev misoptm surface mount package ipm. This igbt module, using fine planar mos gate light punch through technology hvigbt fplpt. Square rbs operating area low vce saturation voltage. Im building a flash circuit for an external flash for a dslr camera.

New discrete 600v extreme light punch through xpt igbts. This advanced hic is a combination of irs low v ceon non punch through igbt technology and the industry. Irs technology offers an extremely compact, high performance ac motor driver in a single isolated package to simplify design. Designing the reliable driver for the latest generation. This article describes the features and performance characteristics of this new device. Additional searches skm300gb063 d, skm 300 gb063 d, skm 300 gb 063d, skm300 gb 063 d, skm 300gb063 d, skm 300 gb063d, skm 300gb 063 d, skm300gb 063 d, skm 300gb063d. Note the six large igbt driver circuits in the racks.

I found a component by linear technology called a photoflash capacitor charger ic with integrated igbt driver. Corporation developed a family of planar 600v xxpt extremely rugged extremely light punch. Infineons igbt 2 family is a non punch through igbt technology with low switching losses and high robustness. Technology to the next power application note apt0408 igbt. Designing the reliable driver for the latest 450a1. Fs, lpt and spt technologies come from different manufacturers but the main idea is the same. An1001 igbt and mosfet drivers correctly calculated this application note describes the calculation of the gate drive performance figures required for a given application.

Punch through in a mosfet is an extreme case of channel length modulation where the depletion layers around the drain and source regions merge into a single depletion region. The phase leg igbt with integrated driver module reference design includes the following features. Lpt structures bring several benefits to igbts, like lower saturation voltage vcesat and faster switching. Features, specifications, alternative product, product training modules, and datasheets are all available. These igbts have asymmetric voltage blocking capabilities. Iramx16up60b series integrated power hybrid ic for 16a, 600v. Ixxkx100n60c3h1 datasheet17 pages ixys extreme light.

Ixidm1401 high voltage isolated driver module into a functional high power device operated directly from a microcontroller unit mcu through a 3 kv isolation barrier. Mc33153 single igbt gate driver the mc33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. It combines the simple gatedrive characteristics of the mosfet with the high current and. This reference design integrates ixys corporations mixa225pf1200tsf phase leg igbt module and ixidm1401 high voltage isolated driver module into a functional high power device operated directly from a microcontroller unit mcu through a 3 kv isolation barrier. Ixys igbt advantages and applications product family featuresadvantages applications extreme light punch through xpt thin wafer technology reduced thermal resistance low energy losses fast switching low tail current high current density positive temperature coefficient of v cesat battery chargers ebikes. This leads to the risk of parasitic turnon and leg shoot through, with consequent destruction of the entire machine. Process enhancements increase igbt efficiency for motor drive. Powered from a single polarity 15v power supply, this design shows the operation of two 1200v igbt devices with a maximum. Comparison of punch through igbt and nonpunch through igbt. Low side driver bsd input logic protection circuit op. Phase leg igbt with an integrated driver module ixys power. Technology to the next power application note apt0408 igbt technical overview distinguishing features application tips jonathan dodge, p. Punching through softly to understand the operation of spt igbts, we must first look at the punch through pt and nonpunch through npt igbts.

Novel softpunchthrough spt 1700v igbt sets benchmark on. Ixys reserves the right to change limits, test conditions, and dimensions. With the proliferation of choices between mosfets and igbts, it is becoming increasingly difficult for todays designer to. They are a preferred solution in motor drive applications. Jun 09, 2018 based on the structure, the insulated gate bipolar transistor igbt can be classified as 1 punch through igbt and 2 nonpunch through igbt in this post let us discuss about the difference between punchthrough igbt and the nonpunch through igbt. Skm300gb063d igbt modules semitrans 3 106x62x31 part number. Punchthroughigbt,npt igbt nopunchthrough,fs igbt field stop, lpt igbt light punch through and spt igbt soft punch through. Furthermore, their low gate charges help minimize gate drive requirements.

A soft and efficient switch for industrial applications. A gate driver sometimes includes also the protection circuit of the. Abb semiconductors ag soft punch through spt pcim nuremberg page 1 of 8 june 2000 soft punch through spt setting new standards in 1200v igbt s. The gatedrive circuit for gan devices is specified by various parameters like operating frequency, turnon and turnoff voltages, gatevoltage risetime, power consumption, and whether the device is being switched as a highside or low. Phaseleg igbt with an integrated driver module ixidm1401. Xtreme light punch through xpt igbts feature 10 us short circuit withstand capability. Although the structure of the igbt is topologically the same as a thyristor with a mos gate mos. This igbt module, using fine planar mos gate light punch through. Ixidm1401 high voltage isolated driver module into a functional high power device operated directly from a microcontroller unit mcu through a 4 kv isolation barrier. Mar 09, 2016 selecting a suitable igbt driver basic functions of gate drivers. Its igbt chip uses light punch through lpt technology and diode chip uses soft reverse recovery technology, so it has a low saturation voltage and lower peak current in switching procedure. The ixa60if1200na is a 1200v xpt igbt with sonic diode and extreme light punch through xpt thin wafer technology. The powerex 1700v igbt family was also expanded last year with the introduction of the kaseries module.

This paper introduces a new 1200v igbt from abb semiconductors. Description extreme light punch through igbt for 2060khz switching. The thin wafer technology combined with the xpt design results in a. Integrated gate drivers, igbts, and freewheeling diodes. Abb semiconductors ag spt 1700v igbt sets benchmark on technology curve pcim page 2 of 5 nuremberg, june 2001 this paper will examine the key characteristics of the new 1700v spt igbt in detail as well as the application of the igbt and antiparallel diode in the new lopak standard module range.